2.5. Tutorials¶
This chapter contains all tutorials related to the nextnano++ software.
2.5.1. Coming Soon¶
These are tutorials which we are currently developing. Some of them may be still empty, inconsistent, with errors, etc. After these tutorials are ready and reviewed, we are moving them to proper sections as — NEW — tutorials. Weblinks of these tutorials are expected to change during the process of development.
New Tutorials¶
Transferred from nextnano³¶
- Energy dispersion in Silicon inversion layers under pseudomorphic strain
- Electronic band structure of 2DHG in Si inversion layers under arbitrary stress | 1D
- — EDU — Piezo- and Pyroelectric charges in GaN/AlN/GaN wurtzite heterostructure
- Two-dimensional electron gas in a Si MOSFET
- I–V characteristics of n-doped GaN single layer
- Hole wave functions in a quantum wire subjected to a magnetic field
- Electron and hole wave functions in a T-shaped quantum wire grown by CEO (cleaved edge overgrowth)
- Electron and hole wave functions in a T-shaped strained quantum wire grown by CEO (cleaved edge overgrowth)
- I–V characteristics of n-doped Si structure
- I–V characteristics of ultrathin-body Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET)
- n-i-n Si resistor
- Ultrathin-body Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) (5 nm)
- Strain effects in freestanding nitride nanostructures
- Energy levels of an “artificial atom” - Spherical and ellipsoidal CdSe Quantum Dot
- Artificial quantum dot crystal - Superlattice dispersion (minibands)
- Vertically coupled quantum wires in a longitudinal magnetic field
2.5.2. Basics¶
Below you can find basic tutorials introducing the most important elements of nextnano++ syntax as well as fundamental concepts hidden behind them. We are continuously working on including new tutorials here sou you can learn nextnano++ easier.
Defining Structures¶
The set of tutorials below is the most basic one aiming at teaching you how to define structures for your simulations. The most relevant elements of nextnano++ syntax is presented here.
Contacts and Boundary Conditions¶
This will be a set of tutorials teaching basics on how to define and choose boundary conditions for your simulations to represent various physical scenarios at the boundaries of your simulation. Currently, you can find here only one tutorial, for the Schottky contact, which will be later split and expanded into multiple more specific tutorials.
Other¶
2.5.3. p-n Junctions & Solar Cells¶
2.5.4. Light-Emitting Diodes¶
2.5.5. Quantum Mechanics¶
2.5.6. Quantum Wells¶
2.5.7. Quantum Wires¶
2.5.8. Quantum Dots¶
- Energy levels in idealistic 3D cubic and cuboidal shaped quantum dots
- Hole energy levels of an “artificial atom” - Spherical Si Quantum Dot (6-band k.p)
- Quantum Dot Molecule
- Energy levels in a pyramidal shaped InAs/GaAs quantum dot including strain and piezoelectric fields
- Hexagonal shaped GaN quantum dot embedded in AlN (wurtzite)
2.5.9. Electronic Band Structures¶
- k.p dispersion in bulk GaAs (strained / unstrained)
- k.p dispersion in bulk unstrained, compressively and tensely strained GaN (wurtzite)
- k.p dispersion in bulk unstrained ZnS, CdS, CdSe and ZnO (wurtzite)
- Energy dispersion of holes in a quantum well
- k.p dispersion of an unstrained GaN QW embedded between strained AlGaN layers
- Energy dispersion of a cylindrical shaped GaN nanowire
2.5.10. Superlattices¶
2.5.11. Cascade Structures¶
2.5.12. Optical Spectra and Transitions¶
Single Particle¶
- Optical absorption for interband and intersubband transitions
- Optical interband transitions in a quantum well - Matrix elements and selection rules
- Optical intraband transitions in a quantum well - Intraband matrix elements and selection rules
- — NEW — Optical absorption of an InGaAs quantum well | 1D
- Intersubband absorption of an infinite quantum well
- Intersubband transitions in InGaAs/AlInAs multiple quantum well systems
Excitons¶
2.5.13. 2-Dimensional Electron Gases (2DEGs)¶
2.5.14. Transmission and Conductance (CBR method)¶
- Transmission (CBR)
- Landauer conductance and conductance quantization: from quantum wires to quantum point contacts
- Electron Flying Qubit
- Efficient method for the calculation of ballistic quantum transport - The CBR method (2D example)
- Transmission through a nanowire (CBR)
- Conductance of a quantum point contact (gated two-dimensional electron gas)
2.5.15. Transistors¶
2.5.16. Magnetic Effects¶
2.5.17. Numerics¶
General¶
This set of tutorials focus on explaining numerical side of simulations with nextnano++ from the practical point of view.
Big 3D systems¶
These tutorials cover topic of practical approach to simulations of big 3D systems aiming at specified accuracy within possibly short time.
2.5.18. Tricks and Hacks¶
This set of tutorials focus on non-standard simulations with nextnano++, therefore, on overcoming difficulties and limitations of models and numerics often arising from the general complexity of simulations of semiconductor devices.
This group of tutorials also covers topics related to extracting additional information from the output of nextnano++ software by post-processing it with nextnanopy and Python programming language.