Contacts{ }

Calling sequence

Contacts{ ... }

Properties

usage: \(\mathrm{\textcolor{ForestGreen}{optional}}\)

Functionality

Defines contacts for simulation of devices with open boundary conditions.

Example

Contacts{
    DensityLeft = 1e18
    DensityRight = 1e18

    Broadening = 10.0
    Ballistic = no
}

Note

See the tutorial — DEV — AlGaAs/GaAs resonant tunneling diode for example usage.

The following keywords are available within this group:

DensityLeft

Calling sequence

Contacts{ DensityLeft = }

Properties

type: real number
values: [0.0, ...)
unit: \(\mathrm{cm^{-3}}\)

Functionality

Sets the carrier density in the left contact.

DensityRight

Calling sequence

Contacts{ DensityRight = }

Properties

type: real number
values: [0.0, ...)
unit: \(\mathrm{cm^{-3}}\)

Functionality

Sets the carrier density in the right contact.

FermiPinningLeft

Calling sequence

Contacts{ FermiPinningLeft = }

Properties

type: real number
unit: \(\mathrm{meV}\)

Functionality

Sets the Fermi level in the left contact with respect to the conduction band edge.

FermiPinningRight

Calling sequence

Contacts{ FermiPinningRight }

Properties

type: real number
unit: \(\mathrm{meV}\)

Functionality

Sets the Fermi level in the right contact with respect to the conduction band edge.

MaterialLeft

Calling sequence

Contacts{ MaterialLeft }

Properties

type: character string

Functionality

Specifies the material of the left contact by Material{ Alias }.

MaterialRight

Calling sequence

Contacts{ MaterialRight }

Properties

type: character string

Functionality

Specifies the material of the left contact by Material{ Alias }.

Broadening

Calling sequence

Contacts{ Broadening }

Properties

type: real number
values: [0.0, ...)
unit: \(\mathrm{meV}\)

Functionality

Sets a phenomenological broadening of the density of states in the contacts.

Ballistic

Calling sequence

Contacts{ Ballistic }

Properties

values: yes or no
default: no

Functionality

If yes, calculate ballistic transport between the contacts (i.e., neglect scattering processes in the device).

Last update: 19/11/2024