nextnano³ - Tutorial

next generation 3D nano device simulator

1D Tutorial

Local density of states

Authors: Stefan Birner

If you want to obtain the input files that are used within this tutorial, please check if you can find them in the installation directory.
If you cannot find them, please submit a Support Ticket.
-> 1D_LDOS_GaAs.in
 

Local density of states

-> 1D_LDOS_GaAs.in

Here, we calculate the local density of states LDOS(z,E) for a one-dimensional system of GaAs which is restricted to z > 0 nm.
At z <= 0 nm, there is an infinite barrier.

This LDOS can be derived analytically and reads

LDOS_1D(z,E) = 2 / (pi h_bar) (2m*/E)^1/2 sin²(kz)

where k = (2m*E)^1/2 / h_bar.

The following figure shows the calculated LDOS_1D(z,E) for z = [0 nm, 20 nm] and E = [0 eV, 0.3 eV].
The GaAs conduction band edge is set to 0 eV.
The units are [nm-1 eV-1].

The local density of states output LDOS(z,E) is contained in these files:
   Schroedinger_1band/LocalDOS_cb001_qc001_sg001_deg001_dir_Kz001.dat / *.coord / *.fld

Local density of states for a 3D system restricted to z > 0 nm

The following plot is based on Fig. 1.11 (p. 30) of
     The Physics of Low-Dimensional Semiconductors - An Introduction
     John H. Davies
     Cambridge University Press (1998)