Mid-IR QCLs¶
InGaAs/AlInAs¶
- Injector doping level-dependent continuous-wave operation of InP-based QCLs at \(\lambda = 7.3 \mu m\) above room temperatureJ. S. Yu, S. Slivken, M. RazeghiSemiconductor Science and Technology 25, 125015 (2010)
GaAs/AlGaAs¶
- 300 K operation of a GaAs-based quantum-cascade laser at \(\lambda\simeq 9 \mu m\)H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. SirtoriApplied Physics Letters 78, 3529 (2001)